Energy deposition by H and He ions at keV energies in self-supporting, single crystalline SiC foils

نویسندگان

چکیده

The specific energy deposition of H and He ions in SiC has been studied for both random channeling orientations. experiments were carried out transmission geometry using the Time-of-Flight Medium Energy Ion Scattering System at 350 keV Danfysik Implanter Uppsala University. target was a self-supporting, single crystalline cubic 3C–SiC (100) foil with nominal thickness 200 nm. measured stopping cross sections are compared data available from literature theoretical predictions. results geometries reveal slightly lower values than predicted by SRIM projectiles whereas good agreement observed over whole range studied. Higher loss is along trajectories comparison to geometry, all energies ions. For ions, however, differences minor, they found generally more pronounced.

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ژورنال

عنوان ژورنال: Radiation Physics and Chemistry

سال: 2022

ISSN: ['1879-0895', '0969-806X']

DOI: https://doi.org/10.1016/j.radphyschem.2022.110033